BFG424W_1

© Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet

Rev. 01 — 21 March 2006

3 of 13

Philips Semiconductors

BFG424W

NPN 25 GHz wideband transistor

5.

Limiting values

[1]

6.

Thermal characteristics

[1]

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

10

V

collector-emitter voltage

open base

-

4.5

V

emitter-base voltage

open collector

-

1

V

collector current

-

30

mA

total power dissipation

[1] -

135

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to solder point

[1] 340

K/W

Fig 1.

Power derating curve

0

40

160

200

150

50

0

100

80

120

mgg681

(mW)