TC58NVG0S3AFT05 datasheet(3/33 Pages) TOSHIBA

Part #	TC58NVG0S3AFT05

Description	1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TC58NVG0S3AFT05

2003-08-20A

3/33

VALID BLOCKS (1)

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

NVB

Number of Valid Blocks

1004



1024

Blocks

(1) The TC58NVG0S3A occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.

(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.

RECOMMENDED DC OPERATING CONDITIONS

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

VCC

Power Supply Voltage

2.7

3.3

3.6

V

VIH

High Level input Voltage

2.0



VCC + 0.3

V

VIL

Low Level Input Voltage

−0.3*



0.8

V

*

−2 V (pulse width lower than 20 ns)

DC CHARACTERISTICS (Ta

==== 0 to 70°C, VCC ==== 2.7 V~3.3 V)

SYMBOL

PARAMETER

CONDITION

MIN

TYP.

MAX

UNIT

IIL

Input Leakage Current

VIN = 0 V to VCC



±10

µA

ILO

Output Leakage Current

VOUT = 0 V to VCC



±10

µA

ICCO1

Reading

CE

= VIL, IOUT = 0 mA, tcycle = 50 ns



10

30

mA

ICCO2

Programming Current



10

30

mA

ICCO3

Erasing Current



10

30

mA

ICCS1

Standby Current

CE

= VIH, WP = 0 V/VCC



1

mA

ICCS2

Standby Current

CE

= VCC − 0.2 V, WP = 0 V/VCC



50

µA

VOH

High Level Output Voltage

VCC, IOH = −400 µA

2.4



V

VOL

Low Level Output Voltage

VCC, IOL = 2.1 mA



0.4

V

IOL (

BY

/

RY

)

Output current of

BY

/

RY

pin VOL = 0.4 V



8



mA

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