M6MGB160S4BVP datasheet(10/30 Pages) MITSUBISHI

Part #	M6MGB160S4BVP

Description	16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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10 / 30 page

MITSUBISHI LSIs

Sep. 1999 , Rev.2.0

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS

3.3V-ONLY FLASH MEMORY &

4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

M6MGB/T160S4BVP

10

DEVICE IDENTIFIER CODE

In the word-wide mode, the upper data(D15-8) is "0".

Code

Manufacturer Code

Pins

Hex. Data

1CH

DQ0

0

A0

VIL

DQ1

0

DQ2

1

DQ3

1

DQ4

1

DQ5

DQ6

0

DQ7

0

Device Code (-T160S4BVP)

A0H

VIH

00

1

Device Code (-B160S4BVP)

VIH

10

0

1

0

A1H

0

1

CAPACITANCE

Symbol

Parameter

Test conditions

pF

Unit

Max

8

12

Typ

Min

Limits

Ta = 25

°C, f = 1MHz, Vin = Vout = 0V

Input capacitance (Address, Control Pins)

Output capacitance

CIN

COUT

1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage

on input/output pins is F-VCC+0.5V which, during transitions, may overshoot to F-VCC+1.5V for periods <20ns.

ABSOLUTE MAXIMUM RATINGS

Conditions

Parameter

With respect to Ground

Symbol

F-Vcc

All input or output voltage

VI1

Flash Vcc voltage

1)

Unit

V

Min

Max

4.6

-0.2

Ambient temperature

Temperature under bias

Ta

Tbs

Storage temperature

Tstg

°C

85

-50

95

-65

125

Output short circuit current

I OUT

mA

100

-0.6

4.6

-20

Note: The value of common pins to Flash Memory is the sum of Flash Memory and SRAM.

All currents are in RMS unless otherwise noted.

1) Typical values at F-Vcc=3.3V, Ta=25

°C

2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than VLKO.

If Vcc is less than VLKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than VLKO, the alteration of memory contents

may occur.

DC ELECTRICAL CHARACTERISTICS (Ta = -20~ 85

°C, F-Vcc = 2.7V ~ 3.6V, unless otherwise noted)

Symbol

Parameter

Max

Typ1)

Limits

Min

Test conditions

Unit

F-VCC standby current

ILO

±11

Output leakage current

mA

0V

£VOUT£F-VCC

ILI

Input leakage current

mA

0V

£VIN£F-VCC

±2.0

F-VCC deep powerdown current

ICC3

F-VCC program current

mA

35

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

ICC4

F-VCC erase current

mA

35

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

Output high voltage

V

VOL

Output low voltage

V

IOL = 4.0mA

0.45

F-Vcc+0.5

VIH

Input high voltage

V

2.0

0.8

VIL

Input low voltage

– 0.5

VOH1

IOH = –2.0mA

0.85(F-Vcc)

V

VOH2

IOH = –100

mA

F-Vcc–0.4

V

VLKO

Low VCC Lock-Out voltage 2)

1.5

2.2

V

ICC5

F-VCC suspend current

200

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

mA

ISB2

5

F-VCC = 3.6V, VIN=GND or F-VCC,

F-CE# = F-RP# = F-WP# = F-VCC

±0.3V

mA

0.1

15

mA

ICC1

F-VCC read current for Word or Byte

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = VIL,

F-RP#=OE#=VIH, IOUT = 0mA

8

ISB1

F-VCC = 3.6V, VIN=VIL/VIH, F-CE# = F-RP# =F-WP# = VIH

mA

200

50

ICC2

15

mA

F-VCC Write current for Word or Byte

F-VCC = 3.6V,VIN=VIL/VIH, F-CE# =WE#= VIL,

F-RP#=OE#=VIH

F-VCC = 3.6V, VIN=VIL/VIH, F-RP# = VIL

mA

15

5

ISB3

mA

0.1

ISB4

F-VCC = 3.6V, VIN=GND or VCC, F-RP# =GND

±0.3V

5

5MHz

4

2

1MHz

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