Sep. 1999 , Rev.2.0

MITSUBISHI LSIs

16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS

3.3V-ONLY FLASH MEMORY &

2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM

Stacked-MCP (Multi Chip Package)

M6MGB/T160S2BVP

11

Read-Only Mode

°C)

°C)

Timing measurements are made under AC waveforms for read operations.

Read timing parameters during command write operations mode are the same as during read-only operations mode.

Typical values at F-Vcc=3.3V, Ta=25

°C

Symbol

Parameter

Address access time

Chip enable to output in low-Z

Chip enable access time

Output enable access time

Chip enable high to output in high Z

Read cycle time

Output enable to output in low-Z

Output enable high to output in high Z

F-RP# low to output high-Z

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

90

0

90

30

25

90

0

25

150

Max

Min

Typ

Limits

Speed Item: -90

F-Vcc=2.7~3.6V

OE# hold from WE# high

F-RP# recovery to F-CE# low

ns

ns

ns

10

0

150

Output hold from CE#, OE#, addresses

Address to BYTE# high or low

5

5

BYTE# access time

BYTE# low to output high-Z

90

25

ns

ns

ns

ns

Write Mode (WE# control)

Symbol

Parameter

Write cycle time

Data hold time

Data set-up time

Address hold time

Address set-up time

Write pulse width

Chip enable hold time

Chip enable set-up time

Write pulse width high

F-RP# high recovery to write enable low

Block Lockhold from valid SRD

Duration of auto-program operation

Duration of auto-block erase operation

Block Lock set-up to write enable high

OE# hold to WE# Low

OE# hold from WE# high

Latency between Read and Write FFH or 71H

-

Byte enable high or low set-up time

Byte enable high or low hold time

Limits

Unit

ns

ns

ns

ns

ns

90

50

50

Max

Min

Typ

0

0

ns

ns

ns

ns

ns

ns

ms

ms

ns

150

4

40

80

600

60

0

30

0

90

0

ns

0

Speed Item: -90

F-Vcc=2.7~3.6V

ns

ns

10

30

50

90

ns

ns

WE# high to F-RY/BY# low

ns

90