Integrated Silicon Solution, Inc. — 1-800-379-4774

1

Rev. A

03/22/01

This document contISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no

responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.

IS62LV1288LL

DESCRIPTION

The

Vcc,131,072-word by 8-bit CMOS static RAM. It is

fabricated using

technology. This highly reliable process coupled with

innovative circuit design techniques, yields higher

performance and low power consumption devices.

When

CE1 is HIGH or CE2 is LOW (deselected), the

device assumes a standby mode at which the power

dissipation can be reduced by using CMOS input levels.

Easy memory expansion is provided by using two Chip

Enable inputs,

CE1 and CE2. The active LOW Write Enable

(

WE) controls both writing and reading of the memory.

The IS62LV1288LL is available in 32-pin TSOP (Type I),

STSOP (8 x 13.4mm), and 450-mil plastic SOP (525-mil

pin to pin) packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

CE1

OE

WE

512 X 2048

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

CE2

128K x 8 LOW POWER and LOW Vcc

CMOS STATIC RAM

FEATURES

• Access times of 45, 55, and 70 ns

• Low active power: 60 mW (typical)

• Low standby power: 15 µW (typical) CMOS

standby

• Low data retention voltage: 2V (min.)

• Ultra Low Power

• Output Enable (

OE) and two Chip Enable

(

CE1 and CE2) inputs for ease in applications

• TTL compatible inputs and outputs

• Single 2.5V (min.) to 3.45V (max.) power supply

• Industrial temperature available

• Available in 32-pin TSOP (Type I), 32-pin

STSOP, and 450-mil SOP

FEBUARY 2001