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M6MGT162S4BVP Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # M6MGT162S4BVP
Description  16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M6MGT162S4BVP Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Sep. 1999 , Rev.2.0
MITSUBISHI LSIs
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY &
4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
M6MGB/T162S4BVP
2
BLOCK DIAGRAM
DATA INPUTS/OUTPUTS
MULTIPLEXER
INPUT/OUTPUT
BUFFERS
DQ15 DQ14DQ13DQ12
DQ2DQ1DQ0
DQ3
WSM
16Mb Flash Memory
X-DECODER
Y-DECODER
Y-GATE / SENSE AMP.
F-CE#
OE#
WE#
F-VCC(3.3V)
GND (0V)
F-WP#
F-RP#
CUI
STATUS / ID REGISTER
128 WORD PAGE BUFFER
Main Block
32KW
F-RY/BY#
READY/BUSY OUTPUT
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
ADDRESS
INPUTS
CHIP ENABLE INPUT
OUTPUT ENABLE INPUT
WRITE ENABLE INPUT
WRITE PROTECT INPUT
RESET/POWER DOWN INPUT
Main Block
32KW
28
Parameter Block5
16KW
Parameter Block6
16KW
Boot Block
16KW
Parameter Block3
16KW
Parameter Block4
16KW
Parameter Block1
16KW
Parameter Block2
16KW
Parameter Block7
16KW
A19
WSM
S-CE
WE#
OE#
524288 WORD x
8 BITS
CLOCK
GENERATOR
DQ 7
DQ 0
S-VCC
GND
S-A-1
4Mb SRAM
A0
A16
A17


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