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74LVC32244AEC Datasheet(PDF) 7 Page - NXP Semiconductors |
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74LVC32244AEC Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 16 page 1999 Aug 31 7 Philips Semiconductors Product specification 32-bit buffer/line driver; 5 V input/output tolerant; 3-state 74LVC32244A; 74LVCH32244A DC CHARACTERISTICS Over recommended operating conditions; voltage are referenced to GND (ground=0V). Notes 1. All typical values are at VCC = 3.3 V and Tamb =25 °C. 2. For bus hold parts the bus hold circuit is switched off when VI exceeds VCC allowing 5.5 V on the input terminal. 3. Valid for data inputs of bus hold parts only (LVCH32xxx-A). 4. For data inputs only. Control inputs do not have a bus hold circuit. 5. The specified sustaining current at the data input holds the input below the specified VI level. 6. The specified overdrive current at the data input forces the data input to the opposite logic input level. SYMBOL PARAMETER TEST CONDITIONS Tamb (°C) UNIT OTHER VCC (V) −40 to +85 MIN. TYP.(1) MAX. VIH HIGH-level input voltage 1.2 VCC −− V 2.7 to 3.6 2.0 −− VIL LOW-level input voltage 1.2 −− GND V 2.7 to 3.6 −− 0.8 VOH HIGH-level output voltage VI =VIH or VIL IO = −12 mA 2.7 VCC − 0.5 −− V IO = −100 µA 3.0 VCC − 0.2 VCC − IO = −18 mA 3.0 VCC − 0.6 −− IO = −24 mA 3.0 VCC − 0.8 −− VOL LOW-level output voltage VI =VIH or VIL IO =12mA 2.7 −− 0.40 V IO = 100 µA 3.0 −− 0.20 IO =24mA 3.0 −− 0.55 II input leakage current VI = 5.5 V or GND; note 2 3.6 −±0.1 ±5 µA IOZ 3-state output OFF-state current VI =VIH or VIL; VO = 5.5 V or GND 3.6 − 0.1 ±5 µA Ioff power off leakage supply VI or VO = 5.5 V 0.0 − 0.1 ±10 µA ICC quiescent supply current VI =VCC or GND; IO = 0 3.6 − 0.1 40 µA ∆I CC additional quiescent supply current per input pin VI =VCC − 0.6 V; IO = 0 2.7 to 3.6 − 5 500 µA IBHL bus hold LOW sustaining current VI = 0.8 V; notes 3, 4 and 5 3.0 75 −− µA IBHH bus hold HIGH sustaining current VI = 2.0 V; notes 3, 4 and 5 3.0 −75 −− µA IBHLO bus hold LOW overdrive current notes 3, 4 and 6 3.6 500 −− µA IBHHO bus hold HIGH overdrive current notes 3, 4 and 6 3.6 −500 −− µA |
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