NTTS2P03R2 datasheet(3/6 Pages) ONSEMI

Part #	NTTS2P03R2

Description	Power MOSFET -2.48 Amps, -30 Volts P?묬hannel Enhancement Mode Single Micro8 Package

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NTTS2P03R2

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3

TJ = −55°C

TJ = 25°C

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus

Gate−to−Source Voltage

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

versus Voltage

TJ = 100°C

TJ = 25°C

VGS = −10 V

VGS = −4.5 V

ID = −2.48 A

VGS = −10 V

VGS = 0 V

TJ = 150°C

TJ = 100°C

VDS ≥ −10 V

150

−50

1.6

1.4

−25

0

25

75

1.2

1

0.8

0.6

30

5

10,000

100

10

15

20

25

10

1

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

125

100

50

TJ, JUNCTION TEMPERATURE (°C)

0.5

0.15

0.1

1.5

2.5

3.5

0.05

0

5.5

0

0.3

0.15

46

0.1

0.05

0

10

1

5

4

23

3

2

0

5

1

4

−ID, DRAIN CURRENT (AMPS)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

VGS = −2.3 V

−2.5 V

TJ = 25°C

0

3

2

1

0

0.25

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.5

0.75

1

1.25

1.5

1.75

−2.9 V

−3.1 V

−10 V

−2.7 V

−3.3 V

−3.5 V

−3.7 V

−3.9 V

−4.1 V

−4.5 V

−4.9 V

−6 V

8

2

0.2

0.25

ID = −2.48 A

TJ = 25°C

4.5

1000

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