TBB1010

Rev.2, Feb. 2003, page 3 of 10

Electrical Characteristics

(Ta = 25°C)

The below specification are applicable for FET1 and FET2 unit

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

6—

—

V

Gate1 to source breakdown

voltage

—

—

V

Gate2 to source breakdown

voltage

—

—

V

Gate1 to source cutoff current

—

—

+100

nA

Gate2 to source cutoff current

—

—

+100

nA

Gate1 to source cutoff voltage

0.6

—

1.1

V

µA

Gate2 to source cutoff voltage

0.6

—

1.1

V

µA

Drain current

12

16

20

mA

Ω

Forward transfer admittance

29

—

mS

Ω, f = 1 kHz

Input capacitance

Ciss

1.7

2.1

2.5

pF

Output capacitance

Coss

1.0

1.4

1.8

pF

Ω

Reverse transfer capacitance

Crss

—

0.03

0.05

pF

f = 1 MHz

Power gain

PG

25

30

—

dB

Noise figure

NF

—

1.1

1.8

dB

Ω, f = 200 MHz