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ABT22V10A5 Datasheet(PDF) 3 Page - NXP Semiconductors |
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ABT22V10A5 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 18 page Philips Semiconductors Product specification ABT22V10A5, A7 5V high-speed universal PLD device with live insertion capability 1996 Dec 16 3 ABSOLUTE MAXIMUM RATINGS1 SYMBOL PARAMETER RATINGS UNIT SYMBOL PARAMETER MIN MAX UNIT VCC Supply voltage2 –0.5 +7.0 VDC VIN Input voltage2 –1.2 VCC + 0.5 VDC VOUT Output voltage –0.5 VCC + 0.5 VDC IIN Input currents –30 +30 mA IOUT Output currents +100 mA Tstg Storage temperature range –65 +150 °C NOTES: 1. Stresses above those listed may cause malfunction or permanent damage to the device. This is a stress rating only. Functional operation at these or any other condition above those indicated in the operational and programming specification of the device is not implied. 2. Except in programming mode. OPERATING RANGES SYMBOL PARAMETER RATINGS UNIT SYMBOL PARAMETER MIN MAX UNIT VCC Supply voltage +4.75 +5.25 VDC Tamb Operating free-air temperature 0 +75 °C THERMAL RATINGS TEMPERATURE Maximum junction 150 °C Maximum ambient 75 °C Allowable thermal rise ambient to junction 75 °C VOLTAGE WAVEFORM 90% 10% 1.5ns 1.5ns +3.0V 0V tR tF MEASUREMENTS: All circuit delays are measured at the +1.5V level of inputs and outputs, unless otherwise specified. Input Pulses SP00368 TEST LOAD CIRCUIT +5V CL R1 R2 S1 C2 C1 NOTE: C1 and C2 are to bypass VCC to GND. VCC GND CK In I0 F0 Fn DUT OE INPUTS SP00369 |
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Similar Description - ABT22V10A5 |
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