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BUK7504-40A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7504-40A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page Philips Semiconductors BUK75/76/7E04-40A TrenchMOS™ standard level FET Product data Rev. 02 — 7 November 2001 3 of 15 9397 750 09059 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. VGS ≥ 4.5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03na19 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 Pder (%) Tmb (ºC) 03ne93 0 50 100 150 200 25 50 75 100 125 150 175 200 Tmb (ºC) ID (A) Capped at 75 A due to package P der P tot P tot 25 C ° () ---------------------- 100% × = 03ne68 1 10 102 103 1 10 102 VDS (V) ID (A) DC 100 ms 10 ms RDSon = VDS / ID 1 ms tp = 10 µs 100 µs Capped at 75 A due to package |
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