JULY 2000 - REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning

flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used

for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of

devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until

the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the

current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the

diverted current subsides.

The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are

guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ

(JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage

and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100

A 10/1000 TISP4xxxH3BJ series in SMB are available.

TISP4xxxL3AJ Overvoltage Protector Series

Description

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

Rating

Symbol

Value

Unit

Repetitive peak off-state voltage, (see Note 1)

‘4070

‘4080

‘4125

‘4145

‘4165

‘4180

‘4220

‘4240

‘4260

‘4290

‘4350

‘4360

‘4395

± 58

± 65

‘4090

± 70

±100

±120

±135

±145

±160

±180

±200

±230

‘4320

±240

±275

±290

±320

V

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

A

2/10 µs(GR-1089-CORE, 2/10 µs voltage wave shape)

125

8/20 µs (IEC 61000-4-5,combination wave generator, 1.2/50 voltage, 8/20 current)

100

10/160 µs(FCC Part 68, 10/160 µs voltage wave shape)

65

5/310 µs(ITU-T K.20/21/45, K.44 10/700 µs voltage wave shape)

50

5/310 µs(FTZ R12, 10/700 µs voltage wave shape)

50

10/560 µs(FCC Part 68, 10/560 µs voltage wave shape)

40

10/1000 µs(GR-1089-CORE, 10/1000 µs voltage wave shape)

30

Non-repetitive peak on-state current (see Notes 2, 3 and 4)

18

7

1.6

A

20 ms (50 Hz) full sine wave

1s (50 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.

Junction temperature

-40 to +150

°C

Storage temperature range

-65 to +150

°C

NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C.

3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.

4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 ° C.