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TISP4072F3LMFRS Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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TISP4072F3LMFRS Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
3 / 11 page NOVEMBER 1997 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4xxxF3LM Overvoltage Protector Series Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD = ±VDRM, 0 °C < TJ < 70 °C ±10 µA V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω ‘4072 ‘4082 ‘4125 ‘4150 ‘4180 ‘4240 ‘4260 ‘4290 ‘4320 ‘4380 ±72 ±82 ±125 ±150 ±180 ±240 ±260 ±290 ±320 ±380 V V(BO) Impulse breakover voltage dv/dt = ±1000 V/µs, RSOURCE =50 Ω di/dt < 20 A/µs ‘4072 ‘4082 ‘4125 ‘4150 ‘4180 ‘4240 ‘4260 ‘4290 ‘4320 ‘4380 ±86 ±96 ±143 ±168 ±198 ±267 ±287 ±317 ±347 ±407 V I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω ±0.15 ±0.6 A VT On-state voltage IT = ±5A, tW = 100 µs ±3V IH Holding current IT = ±5A, di/dt= - /+ 30mA/ms ±0.15 A dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs ID Off-state current VD = ±50 V ±10 µA Coff Off-state capacitance f= 100 kHz, Vd =1 V r.m.s., VD =0, f= 100 kHz, Vd =1 V r.m.s., VD =-50 V ‘4072 - ‘4082 ‘4125 - ‘4180 ‘4240 - ‘4380 ‘4072 - ‘4082 ‘4125 - ‘4180 ‘4240 - ‘4380 63 43 44 25 15 11 108 74 74 40 25 20 pF Parameter Test Conditions Min Typ Max Unit RΘJA Junction to free air thermal resistance EIA/JESD51-3 PCB mounted in an EIA/ JESD51-2 enclosure 120 °C/W Thermal Characteristics Electrical Characteristics for R and T Terminals, TJ = 25 °C (Unless Otherwise Noted) |
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