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BD743C Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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BD743C Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS 2 PRODU CT INFORMA TION AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see Note 5) BD743 BD743A BD743B BD743C 45 60 80 100 V ICBO Collector cut-off current VCE = 50 V VCE = 70 V VCE = 90 V VCE =110 V VCE = 50 V VCE = 70 V VCE = 90 V VCE =110 V VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 VBE =0 TC = 125°C TC = 125°C TC = 125°C TC = 125°C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C 0.1 0.1 0.1 0.1 5 5 5 5 mA ICEO Collector cut-off current VCE = 30 V VCE = 60 V IB =0 IB =0 BD743/743A BD743B/743C 0.1 0.1 mA IEBO Emitter cut-off current VEB = 5 V IC =0 0.5 mA hFE Forward current transfer ratio VCE = 4 V VCE = 4 V VCE = 4 V IC = 1A IC = 5A IC =15A (see Notes 5 and 6) 40 20 5 150 VCE(sat) Collector-emitter saturation voltage IB = 0.5 A IB = 5 A IC = 5A IC = 15 A (see Notes 5 and 6) 1 3 V VBE Base-emitter voltage VCE = 4 V VCE = 4 V IC = 5 A IC =15 A (see Notes 5 and 6) 1 3 V hfe Small signal forward current transfer ratio VCE = 10 V IC = 1A f = 1 kHz 25 |h fe| Small signal forward current transfer ratio VCE = 10 V IC = 1A f = 1 MHz 5 thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.4 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT td Delay time IC = 5 A VBE(off) = -4.2 V IB(on) = 0.5 A RL = 6 Ω IB(off) = -0.5 A tp = 20 µs, dc ≤ 2% 20 ns tr Rise time 350 ns ts Storage time 500 ns tf Fall time 400 ns |
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