BD745B datasheet(3/5 Pages) BOURNS

Part #	BD745B

Description	NPN SILICON POWER TRANSISTORS

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Manufacturer	BOURNS [Bourns Electronic Solutions]

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BD745, BD745A, BD745B, BD745C

NPN SILICON POWER TRANSISTORS

3

P R O D UCT

INFORMA TION

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1.

Figure 2.

MAXIMUM SAFE OPERATING REGIONS

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C - Collector Current - A

0·1

1·0

10

100

10

100

TCS635AE

V

CE = 4 V

t

p = 300 µs, duty cycle < 2%

T

C = 125°C

T

C =

25°C

T

C =

-55°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

COLLECTOR CURRENT

I

C - Collector Current - A

0·1

1·0

10

100

0·01

0·1

1·0

10

TCS635AF

T

C =

-55°C

T

C =

25°C

T

C = 125°C

t

p = 300µs, duty cycle < 2%

I

C

I

B

= 10

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

V

CE - Collector-Emitter Voltage - V

1·0

10

100

1000

0·01

0·1

1·0

10

100

SAS635AC

BD745

BD745A

BD745B

BD745C

t

p =

1 ms,

d = 0.1 = 10%

t

p =

10 ms,

d = 0.1 = 10%

t

p =

50 ms,

d = 0.1 = 10%

DC Operation

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