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TISP3260F3SL Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP3260F3SL Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 12 page MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxF3 (HV) Overvoltage Protector Series Description (continued) These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit Repetitive peak off-state voltage, 0 °C < TA < 70 °C ‘3240F3 ‘3260F3 ‘3290F3 ‘3320F3 ‘3380F3 VDRM ±180 ±200 ±220 ±240 ±270 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) IPPSM A 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 350 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 175 1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 Ω resistor) 90 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 120 10/160 (FCC Part 68, 10/160 voltage wave shape) 60 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 55 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 38 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 50 5/320 (FCC Part 68, 9/720 voltage wave shape, single) 50 10/560 (FCC Part 68, 10/560 voltage wave shape) 45 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 35 Non-repetitive peak on-state current, 0 °C < TA < 70 °C (see Notes 1 and 3) 50 Hz, 1 s D Package SL Package ITSM 4.3 7.1 A Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A diT/dt 250 A/µs Junction temperature TJ -65 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section. 2. Initially, the TISP® device m ust be in thermal equilibrium with 0 °C < TJ <70 °C. The surge may be repeated after the TISP® device returns to its initial conditions. 3. Above 70 °C, derate linearly to zero at 150 °C lead temperature. Electrical Characteristics for R and T Terminal Pair, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD = ±2VDRM, 0 °C< TA <70 °C ±10 µA ID Off-state current VD = ±50 V ±10 µA Coff Off-state capacitance f = 100 kHz, Vd = 100 mV , VD =0, Third terminal voltage = -50 V to +50 V (see Notes 4 and 5) D Package SL Package 0.05 0.03 0.15 0.1 pF NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. 5. Further details on capacitance are given in the Applications Information section. |
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