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TISP4030H1BJR-S Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP4030H1BJR-S Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 9 page AUGUST 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) TISP40xxH1BJ VLV Overvoltage Protector Series Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Rating Symbol Value Unit Repetitive peak off-state voltage ‘4015 ‘4030 ‘4040 VDRM ±8 ±15 ± 25 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) ITSP A 2/10 µs(Telcordia GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (I EC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 5/310 µs (I TU-T K.20/45/21, 10/700 µs voltage wave shape) 5/320 µs(F CC Part 68, 9/720 µs voltage wave shape) 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 10/1000 µs(Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape) ± 500 ± 400 ± 200 ± 150 ± 150 ± 125 ± 100 Non-repetitive peak on-state current (see Notes 1 and 2) ITSM A 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 0.2 s 50 Hz/60 Hz a.c. 2s 50 Hz/60 Hz a.c. 1000 s 50 Hz/60 Hz a.c. 45 50 21 7 2 Initial rate of rise of current (2/10 waveshape) di/dt 450 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially the device must be in thermal equilibrium with TJ =25 °C. 2. The surge may be repeated after the device returns to its initial conditions. Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD =VDRM ±5 µA V(BO) Breakover voltage di/dt = ±0.8 A/ms ‘4015 ‘4030 ‘4040 ±15 ±30 ±40 V V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±12 A/µs, Linear current ramp, Maximum ramp value = ±10 A ‘4015 ‘4030 ‘4040 ±33 ±57 ±74 V I(BO) Breakover current di/dt = ±0.8 A/ms ±0.8 A ID O VT I= ±5 A, t = 100 µs ±3V Tw On-state voltage ff-state current VD = ± 6V VD = ± 13 V VD = ± 22 V ‘4015 ‘4030 ‘4040 ±2 µA IH Holding current I T = ±5A, di/dt= -/+30 mA/ms ±50 m A |
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