*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

JANUARY 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP821xMD Overvoltage Protectors

TISP8210MD BUFFERED P-GATE SCR DUAL

TISP8211MD BUFFERED N-GATE SCR DUAL

COMPLEMENTARY BUFFERED-GATE SCRS

FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

TISP8210MD 8-SOIC Package (Top View)

High Performance Protection for SLICs with +ve & -ve

Battery Supplies

TISP8210MD Negative Overvoltage Protector

– Wide 0 to -110 V Programming Range

– Low +5 mA Max. Gate Triggering Current

– High -150 mA Min. Holding Current

TISP8211MD Positive Overvoltage Protector

– Wide 0 to +110 V Programming Range

– Low -5 mA Max. Gate Triggering Current

– +20 mA Min. Holding Current

Rated for International Surge Wave Shapes

Wave Shape

Standard

A

2/10

GR-1089-CORE

167

10/700

ITU-T K.20/21/45

70

10/1000

GR-1089-CORE

60

1

2

3

4

5

6

7

8

MDRXAKC

NC - No internal connection

G2

A

A

G1

K1

K2

NC

NC

TISP8210MD Device Symbol

SDRXAJB

A

A

G1

G2

K1

K2

Circuit Application Diagram

TISP8211MD 8-SOIC Package (Top View)

1

2

3

4

5

6

7

8

MDRXALC

NC - No internal connection

G2

K

K

G1

A1

A2

NC

NC

TISP8211MD Device Symbol

SDRXAKB

A1

A2

K

K

G1

G2

- V

BAT

SLIC

PROTECTION

TISP8211MD

AI-TISP8-003-a

Tip

Ring

C2

100 nF

+V

BAT

C1

100 nF

TISP8210MD