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TISP3320F3DR-S Datasheet(PDF) 3 Page - Bourns Electronic Solutions |
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TISP3320F3DR-S Datasheet(HTML) 3 Page - Bourns Electronic Solutions |
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3 / 12 page  MARCH 1994 - REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxF3 (HV) Overvoltage Protector Series Electrical Characteristics for T and G or R and G Terminals, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off- state current VD = ±VDRM, 0 °C< TA <70 °C ±10 µA V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω ‘3240F3 ‘3260F3 ‘3290F3 ‘3320F3 ‘3380F3 ±240 ±260 ±290 ±320 ±380 V V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V RSOURCE =50 Ω ‘3240F3 ‘3260F3 ‘3290F3 ‘3320F3 ‘3380F3 ±267 ±287 ±317 ±347 ±407 V I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω ±0.1 ±0.6 A VT On-state voltage IT = ±5A, tW = 100 µs ±3V IH Holding current IT = ±5A, di/dt= -/+30mA/ms ±0.15 A dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs ID Off-state current VD = ±50 V ±10 µA Coff Off-state capacitance f= 1 MHz, Vd =0.1 V r.m.s., VD =0 f= 1 MHz, Vd =0.1 V r.m.s., VD =-5 V f= 1 MHz, Vd =0.1 V r.m.s., VD =-50 V (see Notes 5 and 6) 57 26 11 95 45 20 pF NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. 7. Further details on capacitance are given in the Applications Information section. Thermal Characteristics Parameter Test Conditions Min Typ Max Unit RθJA Junction to free air thermal resistance Ptot =0.8 W, TA = 25 °C 5cm2, FR4 PCB D Package 160 °C/W SL Package 135 |
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