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BC638 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BC638 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 23 3 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 150 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−100 nA IE = 0; VCB = −30 V; Tj = 150 °C −−10 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−100 nA hFE DC current gain VCE = −2 V; see Fig.2 IC = −5mA 40 − IC = −150 mA 63 250 IC = −500 mA 25 − DC current gain IC = −150 mA; VCE = −2 V; see Fig.2 BC636-10 63 160 BC636-16; BC638-16; BC640-16 100 250 VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA −−0.5 V VBE base-emitter voltage IC = −500 mA; VCE = −2V −−1V fT transition frequency IC = −50 mA; VCE = −5 V; f = 100 MHz 100 − MHz DC current gain ratio of the complementary pairs I C = 150 mA; VCE =2V − 1.6 h FE1 h FE2 ----------- |
Similar Part No. - BC638 |
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Similar Description - BC638 |
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