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DESCRIPTION (CONTINUED)

ABSOLUTE MAXIMUM RATINGS

THS7327

SLOS502 – SEPTEMBER 2006

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be

more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

MUX. Its rail-to-rail output stage allows for both ac and dc coupling applications. The monitor pass-thru path

allows for passing the input signal, with no filtering, on to other systems. This path has a 6-dB Gain, 500-MHz

bandwidth, 1300V/

µs slewrate, SAG correction capability, and a high output impedance while disabled to add to

the flexibility of the THS7327.

As part of the THS7327’s flexibility, the input can be selected for ac or dc coupled inputs. The ac-coupled modes

include a sync-tip clamp option for CVBS/Y’/G’B’R’ with sync or a fixed bias for the C’/P’

without sync. The dc input options include a dc input or a dc+Offset shift to allow for a full sync dynamic range at

the output with 0-V input.

The THS7327 is available in a RoHS Compliant TQFP package.

PACKAGING/ORDERING INFORMATION

PACKAGE TYPE

TRANSPORT MEDIA, QUANTITY

THS7327PHP

Tray 250

HTQFP-48 PowerPAD™

THS7327PHPR

Tape and reel, 1000

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

Web site at www.ti.com

UNIT

5.5 V

Input voltage

Output current

±100 mA

Continuous power dissipation

See Dissipation Rating Table

150

°C

125

°C

Storage temperature range

–65

°C to 150°C

HBM

1500 V

ESD ratings

CDM

1500 V

MM

100 V

(1)

Stresses above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied Exposure to absolute maximum rated conditions for extended periods may degrade device reliability.

(2)

The absolute maximum junction temperature under any condition is limited by the constraints of the silicon process.

(3)

The absolute maximum junction temperature for continuous operation is limited by the package constraints. Operation above this

temperature may result in reduced reliability and/or lifetime of the device.

2

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