1999 Apr 15

2

Philips Semiconductors

Product specification

PNP general purpose transistor

BCW89

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 60 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

BCW89

H3

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM256

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−80

V

collector-emitter voltage

−−60

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current

−−200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C