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BD829 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BD829 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1998 May 29 2 Philips Semiconductors Product specification NPN power transistors BD825; BD829 FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose • Driver stages in hi-fi amplifiers and television circuits. DESCRIPTION NPN power transistor in a TO-202; SOT128B plastic package. PNP complements: BD826 and BD830. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline (TO-202; SOT128B) and symbol. handbook, halfpage 2 1 3 MAM305 12 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BD825 −− 45 V BD829 −− 100 V VCEO collector-emitter voltage open base BD825 −− 45 V BD829 −− 80 V ICM peak collector current −− 1.5 A Ptot total power dissipation Tamb ≤ 25 °C −− 2W Tmb ≤ 50 °C −− 8W hFE DC current gain IC = 150 mA; VCE =2V 95 − 165 fT transition frequency IC = 50 mA; VCE = 5 V; f = 100 MHz − 250 − MHz |
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