Electronic Components Datasheet Search |
|
SS3P4 Datasheet(PDF) 1 Page - Vishay Siliconix |
|
SS3P4 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Vishay General Semiconductor SS3P4 New Product Document Number 88954 26-Jun-06 www.vishay.com 1 High-Current Density Surface Mount Schottky Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, free- wheeling, dc-to-dc converters and polarity protection applications. MECHANICAL DATA Case: DO-220AA (SMP) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes the cathode end DO-220AA (SMP) MAJOR RATINGS AND CHARACTERISTICS IF(AV) 3 A VRRM 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V Tj max. 150 °C Note: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 15 x 15 mm copper pad areas RθJL is measured at the terminal of cathode band RθJC is measured at the top centre of the body MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS3P4 UNIT Device marking code 34 Maximum repetitive peak reverse voltage VRRM 40 V Maximum average forward rectified current (see Fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at Tj = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dv/dt 10000 V/µs Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP MAX. UNIT Maximum instantaneous forward voltage (1) at IF = 3 A, at IF = 3 A, Tj = 25 °C Tj = 125 °C VF 0.55 0.50 0.60 0.55 V Maximum reverse current at rated VR (1) Tj = 25 °C Tj = 125 °C IR - 7.5 150 15 µA mA Typical junction capacitance at 4.0 V, 1 MHz CJ 105 pF |
Similar Part No. - SS3P4 |
|
Similar Description - SS3P4 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |