1999 Jul 08

2

Philips Semiconductors

Preliminary specification

Dual N-channel dual gate MOS-FET

BF1102

FEATURES

• Two low noise gain controlled amplifiers in a single

package

• Specially designed for 5 V applications

• Superior cross-modulation performance during AGC

• High forward transfer admittance

• High forward transfer admittance to input capacitance

ratio.

APPLICATIONS

• Gain controlled low noise amplifier for VHF and UHF

applications such as television tuners and professional

communications equipment.

DESCRIPTION

The BF1102 is a combination of two equal dual gate

MOS-FETs with shared source and gate 2 leads.

The source and substrate are interconnected. An internal

bias circuit enables DC stabilization and a very good

cross-modulation performance at 5 V supply voltage.

Integrated diodes between the gates and source protect

against excessive input voltage surges. The transistor has

a SOT363 micro-miniature plastic package.

PINNING - SOT363

PIN

DESCRIPTION

1

gate 1 (1)

2

gate 2 (1,2)

3drain (1)

4drain (2)

5

source (1,2)

6

gate 1 (2)

Fig.1 Simplified outline and symbol.

Marking code: W1.

handbook, halfpage

MBL029

AMP1

d (1)

g1 (1)

d (2)

g1 (2)

AMP2

g2 (1, 2)

s (1, 2)

13

2

4

5

6

QUICK REFERENCE DATA

Note

1.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per MOS-FET unless otherwise specified

drain-source voltage

−−

7V

drain current (DC)

−−

40

mA

total power dissipation

≤ 102 °C; note 1

−−

200

mW

forward transfer admittance

−

43

−

mS

input capacitance at gate 1

−

2.8

−

pF

reverse transfer capacitance

f = 1 MHz

−

30

−

fF

F

noise figure

f = 800 MHz

−−

2.8

dB

cross-modulation

input level for k = 1% at 40 dB AGC 100

−−

dB

µV

operating junction temperature

−−

150

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.