1997 Jul 07

3

Philips Semiconductors

Product specification

NPN medium frequency transistor

BF199

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

25

V

emitter-base voltage

open collector

−

4V

collector current (DC)

−

25

mA

peak collector current

−

25

mA

total power dissipation

−

500

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

−−

100

nA

emitter cut-off current

−−

100

nA

DC current gain

38

−−

base-emitter voltage

−

775

925

mV

feedback capacitance

−−

0.5

pF

transition frequency

−

550

−

MHz