PPBSS8110Y datasheet(5/13 Pages) PHILIPS

Part #	PPBSS8110Y

Description	100 V, 1 A NPN low VCEsat (BISS) transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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5 / 13 page

9397 750 12567

Product data sheet

Rev. 01 — 2 June 2004

5 of 13

Philips Semiconductors

PBSS8110Y

100 V, 1 A NPN low VCEsat (BISS) transistor

7.

Characteristics

Mounted on FR4 PCB; mounting pad for collector = 1 cm2.

(1)

δ =1.

(2)

δ = 0.75.

(3)

δ = 0.5.

(4)

δ = 0.33.

(5)

δ = 0.2.

(6)

δ = 0.1.

(7)

δ = 0.05.

(8)

δ = 0.02.

(9)

δ = 0.01.

(10)

δ =0.

Fig 3.

Transient thermal impedance as a function of pulse time; typical values.

001aaa797

10

1

102

103

Zth

(K/W)

10−1

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

(9)

(8)

(7)

(6)

(5)

(4)

(1)

(10)

(2)

(3)

Table 7:

Characteristics

Tj = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = 80 V; IE = 0 A

-

100

nA

VCB = 80 V; IE = 0 A;

Tj = 150 °C

--50

µA

ICES

collector-emitter

cut-off current

VCE = 80 V; VBE = 0 V

-

100

nA

IEBO

emitter-base cut-off

current

VEB = 4 V; IC = 0 A

-

100

nA

hFE

DC current gain

VCE = 10 V; IC = 1 mA

150

-

VCE = 10 V; IC = 250 mA

150

-

500

VCE = 10 V; IC = 0.5 A

[1]

100

-

VCE = 10 V; IC = 1 A

[1]

80

-

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