1999 Apr 21

2

Philips Semiconductors

Product specification

PNP high-voltage transistors

BF621; BF623

FEATURES

• Low current (max. 50 mA)

• High voltage (max. 300 V).

APPLICATIONS

• Video output stages.

DESCRIPTION

PNP high-voltage transistor in a SOT89 plastic package.

NPN complements: BF620 and BF622.

PINNING

PIN

DESCRIPTION

1

emitter

2

collector

3

base

Fig.1 Simplified outline (SOT89) and symbol.

handbook, halfpage

123

Bottom view

MAM297

3

2

1

MARKING

TYPE NUMBER

MARKING CODE

BF621

DF

BF623

DB

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BF621

−−300

V

BF623

−−250

V

collector-emitter voltage

open base

BF621

−−300

V

BF623

−−250

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−50

mA

peak collector current

−−100

mA

peak base current

−−50

mA

total power dissipation

−

1.25

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C