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BF904R Datasheet(PDF) 2 Page - NXP Semiconductors |
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BF904R Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page  1999 May 17 2 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. PINNING CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 3g2 gate 2 4g1 gate 1 Fig.1 Simplified outline (SOT143B) and symbol. BF904 marking code: M04. handbook, halfpage 43 2 1 Top view MAM124 s,b d g 1 g 2 Fig.2 Simplified outline (SOT143R) and symbol. BF904R marking code: M06. handbook, halfpage Top view MAM125 - 1 s,b d g 1 g 2 34 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 7V ID drain current −− 30 mA Ptot total power dissipation −− 200 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 22 25 30 mS Cig1-s input capacitance at gate 1 − 2.2 2.6 pF Crs reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 800 MHz − 2 − dB |
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Similar Description - BF904R |
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