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BF904AWR Datasheet(PDF) 2 Page - NXP Semiconductors |
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BF904AWR Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 1999 May 14 2 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR FEATURES • Specially designed for use at 5 V supply voltage • Short channel transistor with high transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistors. The transistors consist of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. The BF904A, BF904AR and BF904AWR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. PINNING PIN DESCRIPTION 1 source 2 drain 3 gate 2 4 gate 1 Fig.1 Simplified outline (SOT143B). BF904A marking code: M41. handbook, 2 columns Top view MSB014 12 3 4 Fig.2 Simplified outline (SOT143R). BF904AR marking code: M42. handbook, 2 columns Top view MSB035 1 2 4 3 Fig.3 Simplified outline (SOT343R). BF904AWR marking code: MH. halfpage Top view MSB842 21 4 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 7V ID drain current −− 30 mA Ptot total power dissipation Ts ≤ 110 °C −− 200 mW y fs forward transfer admittance 22 25 30 mS Cig1-ss input capacitance at gate 1 − 2.2 2.6 pF Crss reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 800 MHz − 2 − dB Tj operating junction temperature −− 150 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. |
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