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BFC505 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BFC505
Description  NPN wideband cascode transistor
Download  11 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFC505 Datasheet(HTML) 2 Page - NXP Semiconductors

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1996 Oct 08
2
Philips Semiconductors
Product specification
NPN wideband cascode transistor
BFC505
FEATURES
• Small size
• High power gain at low bias current and high
frequencies
• High reverse isolation
• Low noise figure
• Gold metallization ensures excellent reliability
• Minimum operating voltage VC2−E1 =1V.
APPLICATIONS
• Low voltage, low current, low noise and high gain
amplifiers
• Oscillator buffer amplifiers
• Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
PINNING - SOT353
PIN
SYMBOL
DESCRIPTION
1b2
base 2
2e1
emitter 1
3b1
base 1
4c1/e2
collector 1/emitter 2
5c2
collector 2
Fig.1 Simplified outline and symbol.
handbook, halfpage
3
1
4
5
2
Top view
MAM212
c2
b2
c1/e2
b1
e1
QUICK REFERENCE DATA
b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cre
feedback capacitance CB1−C2
Ie = 0; VC2-E1 = 0; f = 1 MHz
−−
10
fF
maximum isolation
IC = 5 mA; VC2 =VB2 =3V;
f = 900 MHz
60
−−
dB
MSG
maximum stable power gain
IC = 0.5 mA; VC2 =VB2 =1V;
f = 900 MHz; Tamb =25 °C
22
dB
F
noise figure
IC = 0.5 mA; VC2-E1 =1V;
f = 500 MHz;
ΓS = Γopt
1.1
1.4
dB
IC = 1 mA; VC2-E1 =3V;
f = 900 MHz;
ΓS = Γopt
1.8
2.1
dB
Rth j-s
thermal resistance from
junction to soldering point
single loaded
−−
230
K/W
double loaded
−−
115
K/W
s
21 s12
2


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