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BFC505 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFC505 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 11 page 1996 Oct 08 2 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 FEATURES • Small size • High power gain at low bias current and high frequencies • High reverse isolation • Low noise figure • Gold metallization ensures excellent reliability • Minimum operating voltage VC2−E1 =1V. APPLICATIONS • Low voltage, low current, low noise and high gain amplifiers • Oscillator buffer amplifiers • Wideband voltage-to-current converters. DESCRIPTION Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and has a very low feedback capacitance resulting in high isolation. PINNING - SOT353 PIN SYMBOL DESCRIPTION 1b2 base 2 2e1 emitter 1 3b1 base 1 4c1/e2 collector 1/emitter 2 5c2 collector 2 Fig.1 Simplified outline and symbol. handbook, halfpage 3 1 4 5 2 Top view MAM212 c2 b2 c1/e2 b1 e1 QUICK REFERENCE DATA b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cre feedback capacitance CB1−C2 Ie = 0; VC2-E1 = 0; f = 1 MHz −− 10 fF maximum isolation IC = 5 mA; VC2 =VB2 =3V; f = 900 MHz 60 −− dB MSG maximum stable power gain IC = 0.5 mA; VC2 =VB2 =1V; f = 900 MHz; Tamb =25 °C − 22 − dB F noise figure IC = 0.5 mA; VC2-E1 =1V; f = 500 MHz; ΓS = Γopt − 1.1 1.4 dB IC = 1 mA; VC2-E1 =3V; f = 900 MHz; ΓS = Γopt − 1.8 2.1 dB Rth j-s thermal resistance from junction to soldering point single loaded −− 230 K/W double loaded −− 115 K/W s 21 s12 ⁄ 2 |
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