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THS1230CDWR Datasheet(PDF) 6 Page - Texas Instruments |
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THS1230CDWR Datasheet(HTML) 6 Page - Texas Instruments |
6 / 22 page www.ti.com ELECTRICAL CHARACTERISTICS (CONTINUED) 1.5 V BAND GAP REFT REFB CT CB CTB THS1230 THS1230 SLAS291B – OCTOBER 2000 – REVISED MARCH 2004 over recommended operating conditions (AV DD = DVDD = 3.3 V, fs = 30 MHz/50% duty cycle, MODE = 1, 1-V input span, internal reference, T min to Tmax) (unless otherwise noted) REFT, REFB REFERENCE VOLTAGES (all supplies = 3.3 V) PARAMETER TEST CONDITION MIN TYP MAX UNIT INTERNAL REFERENCE(1) VREFT Upper reference voltage 2.15 VREFB Lower reference voltage 1.15 V VREF Differential reference voltage, VREFT – VREFB 0.95 1 1.05 Differential reference voltage, VREFT – VREFB accuracy –5% 5% EXTERNAL REFERENCE Externally applied VREFT reference voltage range 2 2.5 Externally applied VREFB reference voltage range 1.05 1.3 V Externally applied (VREFT – VREFB) reference voltage range 0.75 1.05 External mode VREFT to VREFB impedance 9 k Ω INTERNAL OR EXTERNAL REFERENCE CT VREFT decoupling capacitor value 0.1 CB VREFB decoupling capacitor value 0.1 µF CTB Decoupling capacitor VREFT to VREFB 10 (1) The internal reference voltage is not intended for use driving off chip. Figure 1. Reference Generation 6 |
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