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WED2DL32512V38BI Datasheet(PDF) 4 Page - White Electronic Designs Corporation |
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WED2DL32512V38BI Datasheet(HTML) 4 Page - White Electronic Designs Corporation |
4 / 9 page 4 White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com WED2DL32512V ABSOLUTE MAXIMUM RATINGS* Voltage on VDD Supply relative to VSS -0.5V to +4.6V Voltage on VDDQ Supply relative to VSS -0.5V to +4.6V VIN (DQx) -0.5V to VDDQ +0.5V VIN (Inputs) -0.5V to VDD +0.5V Storage Temperature (BGA) -55 °C to +125°C Short Circuit Output Current 100 mA *Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ELECTRICAL CHARACTERISTICS Description Symbol Conditions Min Max Units Notes Input High (Logic 1)Voltage VIH 2.0 VDD +0.3 V 1 Input Low (Logic 0) Voltage VIL -0.3 0.8 V 1 Input Leakage Current ILI 0V ≤ VIN ≤ VDD -1.0 1.0 mA 2 Ouptut Leakage Current ILO Output(s) disabled, 0V ≤ VIN ≤ VDD -1.0 1.0 mA Output High Voltage VOH IOH = -4.0mA 2.4 — V 1 Output Low Voltage VOL IOL = 8.0mA — 0.4 V 1 Supply Voltage VDD 3.135 3.6 V 1 Isolated Output Buffer SupplyVDDQ 3.134 3.6 V NOTES: 1. All voltages referenced to Vss (GND). 2. MODE has an internal pull-up, and input leakage = ±10µA. Description Conditions Symbol Typ Max Units Notes Control Input Capacitance TA = 25 °C; f = 1MHz CI 36 pF 1 Input/Output Capacitance (DQ) TA = 25 °C; f = 1MHz CO 45 pF 1 Address Capacitance TA = 25 °C; f = 1MHz CA 35 pF 1 Clock Capacitance TA = 25 °C; f = 1MHz CCK 2.5 4 pF 1 NOTES: 1. This parameter is sampled. BGA CAPACITANCE PARTIAL TRUTH TABLE - WRITE COMMANDS Function BWE BWa BWb BWc BWd Read H X X X X Read L H H H H Write Byte “a” L L H H H Write All Bytes L L L L L NOTE: Using BWE and BWa through BWd, any one or more bytes may be written. Description Symbol Conditions Typ 200* 166 150 133 Units Notes MHz MHz MHz MHz Power Supply Device selected; All inputs ≤ VIL or 3 VIH; Cycle time 3 tKC MIN; Current: Operating IDD VDD = MAX; Outputs open 950 800 740 600 mA 1,2,3 Device deselected; VDD = MAX; All inputs ≤ VSS + 0.2 CMOS Standby ISB2 or VDD - 0.2; All inputs static; CLK frequency = 0 10 20 20 20 20 mA 2,3 Device deselected; VDD = MAX; All inputs ≤ VIL or VIH; TTL Standby ISB3 All inputs static; CLD frequency = 0 20 40 40 40 40 mA 2,3 Device deselected; VDD = MAX; All inputs ≤ VSS + 0.2 Clock Running ISB4 or VDD -0.2; Cycle time 3 tKC MIN 80 220 180 160 140 mA 2,3 * Advanced Information NOTES: 1. IDD is specified with no output current and increases with faster cycle times. IDD increases with faster cycle times and greater output loading. 2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means device is active (not in power-down mode). 3. Typical values are measured at 3.3V, 25 °C and 133MHz. DC CHARACTERISTICS |
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