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IDT71P74604S200BQ Datasheet(PDF) 11 Page - Integrated Device Technology |
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IDT71P74604S200BQ Datasheet(HTML) 11 Page - Integrated Device Technology |
11 / 22 page 6.42 11 IDT71P74204 (2M x 8-Bit), 71P74104 (2M x 9-Bit), 71P74804 (1M x 18-Bit) 71P74604 (512K x 36-Bit) Advance Information 18 Mb QDR II SRAM Burst of 4 Commercial Temperature Range DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 1.8 ± 100mV, VDDQ = 1.4V to 1.9V) Param eter Sym bol Test Conditions Min Max Unit Note Input Le akage Current IIL V DD = Max V IN = VSS to VDD Q -10 +10 µA Outp ut Le akag e Curre nt IOL Outp ut Disabled -10 +10 µA Operating Current (x36,x18,x 9,x 8): DDR IDD V DD = Max , IOUT = 0m A (o utputs o pen), Cyc le Tim e > tKH KH Min 333M HZ - TB D mA 1 300M HZ - TB D 250M HZ - TB D 300M Hz - TB D 167M Hz - TB D S tand b y Curre nt: NOP ISB1 De vice De s e le cte d (in NOP state ) IOUT = 0m A (o utputs o pen), f=M ax, A ll Inp uts <0.2V o r > V DD -0.2V 333M HZ - TB D mA 2 300M HZ - TB D 250M HZ - TB D 200M Hz - TB D 167M Hz - TB D Outp ut Hig h Vo ltag e V OH1 RQ = 250 Ω, IOH = -15mA V DD Q /2-0.12 V DD Q /2+0.12 V 3,7 Outp ut Lo w Vo ltag e V OL1 RQ = 250 Ω, IOL = 15mA V DD Q /2-0.12 V DD Q /2+0.12 V 4,7 Outp ut Hig h Vo ltag e V OH2 IOH = -0.1mA V DD Q -0.2 V DD Q V 5 Outp ut Lo w Vo ltag e V OL2 IOL = 0.1m A V SS 0.2 V 6 6111 tb l 10 c NOTES: 1. Operating Current is measured at 100% bus utilization. 2. Standby Current is only after all pending read and write burst operations are completed. 3. Outputs are impedance-controlled. IOH = -(VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175 Ω < RQ < 350Ω. This parameter is tested at RQ = 250 Ω, which gives a nominal 50Ω output impedance. 4. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175 Ω < RQ < 350Ω. This parameter is tested at RQ = 250 Ω, which gives a nominal 50Ω output impedance. 5. This measurement is taken to ensure that the output has the capability of pulling to the VDDQ rail, and is not intended to be used as an impedance measurement point. 6. This measurement is taken to ensure that the output has the capability of pulling to Vss, and is not intended to be used as an impedance measurement point. 7. Programmable Impedance Mode. |
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