6.42

11

IDT71P74204 (2M x 8-Bit), 71P74104 (2M x 9-Bit), 71P74804 (1M x 18-Bit) 71P74604 (512K x 36-Bit)

Advance Information

18 Mb QDR II SRAM Burst of 4

Commercial Temperature Range

DC Electrical Characteristics Over the Operating Temperature and

Param eter

Sym bol

Test Conditions

Min

Max

Unit

Note

Input Le akage Current

-10

+10

µA

Outp ut Le akag e Curre nt

Outp ut Disabled

-10

+10

µA

Operating Current

(x36,x18,x 9,x 8): DDR

-

TB D

mA

1

-

TB D

-

TB D

300M Hz

-

TB D

167M Hz

-

TB D

S tand b y Curre nt: NOP

De vice De s e le cte d (in NOP state )

f=M ax,

A ll Inp uts <0.2V o r > V DD -0.2V

-

TB D

mA

2

-

TB D

-

TB D

200M Hz

-

TB D

167M Hz

-

TB D

Outp ut Hig h Vo ltag e

RQ = 250

V

3,7

Outp ut Lo w Vo ltag e

RQ = 250

V

4,7

Outp ut Hig h Vo ltag e

V

5

Outp ut Lo w Vo ltag e

0.2

V

6

6111 tb l 10 c

NOTES:

1. Operating Current is measured at 100% bus utilization.

2. Standby Current is only after all pending read and write burst operations are completed.

Ω < RQ < 350Ω. This

parameter is tested at RQ = 250

Ω, which gives a nominal 50Ω output impedance.

Ω < RQ < 350Ω. This

parameter is tested at RQ = 250

Ω, which gives a nominal 50Ω output impedance.

impedance measurement point.

measurement point.

7. Programmable Impedance Mode.