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BFG480W Datasheet(PDF) 4 Page - NXP Semiconductors |
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BFG480W Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 16 page  1998 Oct 21 4 Philips Semiconductors Product specification NPN wideband transistor BFG480W CHARACTERISTICS Tj =25 °C unless otherwise specified. Notes 1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC =50 µA; IE = 0 14.5 −− V V(BR)CEO collector-emitter breakdown voltage IC = 5 mA; IB = 0 4.5 −− V V(BR)EBO emitter-base breakdown voltage IE = 100 µA; IC =0 1 −− V ICBO collector-base leakage current VCE =5V; VBE =0 −− 70 nA hFE DC current gain IC = 80 mA; VCE = 2 V; see Fig.3 40 60 100 Cc collector capacitance IE =ie = 0; VCB = 2 V; f = 1 MHz − 1.4 − pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz − 2.2 − pF Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz; see Fig.4 − 340 − fF fT transition frequency IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C; see Fig.5 − 21 − GHz Gmax maximum power gain; note 1 IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C; see Figs 7 and 8 − 16 − dB insertion power gain IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C; see Fig.8 − 12 − dB F noise figure IC = 8 mA; VCE = 2 V; f = 900 MHz; ΓS = Γopt; see Fig.13 − 1.2 − dB IC = 8 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt; see Fig.13 − 1.8 − dB PL1 output power at 1 dB gain compression Class-AB; δ < 1 : 2; tp = 5 ms; VCE = 3.6 V; ICQ = 1 mA; f = 2 GHz − 20 − dBm ITO third order intercept point IC = 80 mA; VCE = 2 V; f = 2 GHz; ZS =ZS opt; ZL =ZL opt; note 2 − 28 − dBm S 21 2 |
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