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KMI15-1 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # KMI15-1
Description  Integrated rotational speed sensor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

KMI15-1 Datasheet(HTML) 3 Page - NXP Semiconductors

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1996 Dec 05
3
Philips Semiconductors
Preliminary specification
Integrated rotational speed sensor
KMI15/1
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 134).
Note
1. With RL = 115 Ω the device is continuously protected against wrong polarity of DC supply voltage (VCC) to GND
(see Fig.7).
CHARACTERISTICS
Tamb =25 °C; VCC = 12 V; d = 2.1 mm; ft = 2 kHz; test circuit: see Fig.7; RL =115 Ω; sensor positioning: see Fig.15;
gear wheel: module 2 mm; material 1.0715; unless otherwise specified.
Note
1. High rotational speeds of wheels reduce the sensing distance due to eddy current effects (see Fig.17).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
DC supply voltage
Tamb = −40 to +85 °C; RL =115 Ω−
16
V
Tstg
storage temperature
−40
+150
°C
Tamb
ambient operating temperature
−40
+85
°C
Tsld
soldering temperature
t
≤ 10 s
260
°C
output short-circuit duration to GND
continuous; note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICC (low)
current output signal low
see Figs 6 and 8
5.6
7.0
8.4
mA
ICC (high)
current output signal high
see Figs 6 and 8
11.2
14.0
16.8
mA
tr
output signal rise time
CL = 100 pF; see Fig.9; 10 to 90% value −
0.5
−µs
tf
output signal fall time
CL = 100 pF; see Fig.9; 10 to 90% value −
0.7
−µs
td
switching delay time
between stimulation pulse (generated
by a coil) and output signal
1
−µs
ft
operating tooth frequency for both rotation directions
0
25000
Hz
d
sensing distance
see Fig.15 and note 1
0 to 2.5 0 to 2.9
mm
δ
duty cycle
see Fig.6
30
50
70
%


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