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BFM520 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFM520 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 10 page  1996 Oct 08 5 Philips Semiconductors Product specification Dual NPN wideband transistor BFM520 Fig.2 Power derating as a function of soldering point temperature; typical values. handbook, halfpage 0 50 100 200 1 0 MBG228 150 1.5 0.5 Ptot (mW) Ts ( oC) double loaded single loaded Fig.3 Transition frequency as a function of collector current; typical values. f = 1 GHz; Tamb =25 °C. handbook, halfpage MRA705 fT (GHz) IC (mA) VCE = 6V VCE = 3V 12 8 4 0 10−1 110 102 Fig.4 DC current gain as a function of collector current; typical values. VCE =6V. handbook, halfpage MRA703 0 250 50 100 150 200 hFE IC (mA) 10−1 10−2 1 10 102 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. IC = 0; f = 1 MHz. handbook, halfpage MRA704 0.6 0.4 0.2 0 04 8 12 Cre (pF) VCB (V) |
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Similar Description - BFM520 |
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