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APT40GP60B2DF2 Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT40GP60B2DF2 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 9 page  APT40GP60B2DF2 TYPICAL PERFORMANCE CURVES T-MaxTM G C E MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com STATIC ELECTRICAL CHARACTERISTICS The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 41A • Low Gate Charge • 200 kHz operation @ 400V, 26A • Ultrafast Tail Current shutoff • SSOA rated POWER MOS 7® IGBT G C E MIN TYP MAX 600 3 4.5 6 2.2 2.7 2.1 500 3000 ±100 Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts µA nA Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL APT40GP60B2DF2 600 ±20 ±30 100 62 160 160A @ 600V 543 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current 7 @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) APT40GP60B2DF2 600V |
Similar Part No. - APT40GP60B2DF2 |
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