Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 6 March 2005

The Communications Edge

TM

AH103A

High Gain, High Linearity ½-Watt Amplifier

Product Information

Product Features

SOIC-8 Package w/ heat slug

Applications

Product Description

The AH103A is a high gain, high linearity ½-Watt

amplifier. This device is comprised of two individual

MMIC amplifiers internally and can be used with an

external interstage match for any of the mobile

infrastructure frequency bands.

The dual-stage

amplifier achieves up to +46 dBm IP3 performance

with 29 dB gain.

The device conforms to WJ Communications’ long

history of producing high reliability and quality

components. The AH103A has an associated MTTF

of a minimum of 100 years at a mounting

temperature of 85

°C and is housed in a lead-free

/green/RoHS-compliant

SOIC-8

package.

All

devices are 100% RF & DC tested.

The product is targeted for use as driver amplifiers

for wireless infrastructure where high performance

and high linearity are required.

Functional Diagram

1

2

3

4

8

7

6

5

AMP 1

AMP 2

Function

Pin No.

Amp2 in

1

Amp1 out / Bias 1

2

Ground

3, 5, 8,

Backside copper

RF in (Amp1 in)

4

RF out (Amp2 out)

6

Bias 2

7

Specifications

(1)

Parameter

Units

Min

Typ

Max

Operational Bandwidth

MHz

60

2700

Test Frequency

MHz

900

Gain

dB

29.1

Output IP3

dB

+46

Output P1dB

dBm

+27

Test Frequency

MHz

1900

Gain

dB

23.5

25.4

Input Return Loss

dB

19

Output Return Loss

dB

11

Output IP3

(2)

dBm

+42

+45

Output P1dB

dBm

+25

+26.7

Noise Figure

dB

3

Supply Voltage (Amp1)

V

+4.5

Supply Voltage (Amp2)

V

+9

Operating Current

(3)

mA

225

275

330

1. Test conditions unless otherwise noted: 25 ºC, Vdd1 = +4.5 V, Vdd2 = +9 V, in a tuned application circuit.

2. 3OIP measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. Amp1 and Amp2 have a typical current draw of 75 and 200 mA, respectively.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

°C

Storage Temperature

-55 to +125

°C

DC Voltage (pin 2)

+6 V

DC Voltage (pin 6, 7)

+11 V

RF Input Power (continuous)

4 dB above Input P1dB

Junction Temperature

+220

°C

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

(1)

Parameter

Units

Typical

Frequency

MHz

900

1900

2140

Gain

dB

29.1

25.4

25

Input Return Loss

dB

20

19

24

Output Return Loss

dB

19

11

11

Output IP3

dBm

+46

+45

+45

Output P1dB

dBm

+27

+26.7

+26.3

IS-95 Ch. Power

(4)

@ -45 dBc ACPR

dBm

+20.7

+20.5

W-CDMA Ch. Power

(5)

@ -45 dBc ACPR / ACLR

dBm

+18.5

Noise Figure

dB

2.5

3

2.9

Supply Bias Amp1

+4.5 V @ 75 mA

Supply Bias Amp2

+9 V @ 200 mA

4. ACPR is measured at 900 and 1900 MHz with a IS-95, 9 Channels Forward, ±885 kHz offset, 30

kHz BW, 1.23 MHz Channel BW.

5. ACLR is measured at 2140 MHz with a 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz

offset, 3.84 MHz Channel BW.

Ordering Information

Part No.

Description

AH103A-G

High Gain ½-Watt Amplifier

(lead-free/green/RoHS-compliant SOIC-8 Pkg)

AH103A-PCB900

0.7 – 1.0 GHz Evaluation Circuit

AH103A-PCB1900

1.8 – 2.0 GHz Evaluation Circuit

AH103A-PCB2140

2.1 – 2.2 GHz Evaluation Circuit