IRK.F180.. Series

8

Bulletin I27100 rev. C 03/01

www.irf.com

Fig. 13 - Frequency Characteristics

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

50 H z

40 0

1000

5000

150

250 0

Pulse Basewidth ( s)

Snub b er circuit

R = 10 ohm s

C = 0.47 F

V

= 80% V

tp

1E4

IRK .F1 80.. Se rie s

Tra p e zoid a l p ulse

T

= 60 C d i/d t 50A / s

C

s

s

D

DR M

E1

1E2

1E3

1E4

50 H z

400

100 0

5000

15 0

250 0

Pu lse Ba se w idth ( s)

IRK .F 180.. Se ries

Tra p ezoid a l p ulse

T

= 60 C d i/d t 100A / s

Snub b e r circuit

R = 10 ohm s

C = 0.47

F

V

= 80% V

1E1

tp

DR M

C

s

s

D

0.1

1

10

100

0.01

0.1

1

10

100

VGD

IG D

(b )

(a )

(2)

(3)

In stan tan eo us G ate C urre n t (A)

a) R e c o m m e n d e d lo ad lin e fo r

b ) R e c o m m e n d e d lo a d lin e fo r

Recta n g u lar g a te p u lse

ra te d d i/d t : 1 0V , 1 0o h m s

< = 3 0% ra te d di/d t : 1 0V , 20 o h m s

(1) P G M = 8W , t p = 25m s

(2) P G M = 20W , t p = 1m s

(3) P G M = 40W , t p = 5m s

(4) PG M = 80W , t p = 2.5m s

IRK .F180.. Serie s

Fre que n cy Lim ite d by PG (A V)

(1)

(4)

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

10 jou les per pu lse

5

2.5

1

0.5

0.2 5

0.1

0.05

IRK.F 180.. Series

Sinuso id a l p ulse

Pu lse Base w id th ( s)

tp

1E4

E1

1E2

1E3

1E4

10 jou les per pulse

5

2.5

1

0.5

0.25

0.1

0.0 5

Pu lse Ba se w idth ( s)

IRK.F180.. Series

Tra p ezo id a l p uls e

di/d t 50 A / s

tp

1E1