AP20T03GH datasheet(2/4 Pages) A-POWER

Part #	AP20T03GH

Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

30

-

V

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=1mA

-

0.02

-V/℃

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V, ID=8A

-

50

mΩ

VGS=4.5V, ID=5A

-

80

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1

-

3

V

gfs

Forward Transconductance

VDS=5V, ID=5A

-

6

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=30V, VGS=0V

-

1

uA

Drain-Source Leakage Current (Tj=150

oC)

VDS=24V, VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=-

-

nA

Qg

Total Gate Charge

2

ID=10A

-

4

7

nC

Qgs

Gate-Source Charge

VDS=24V

-

1.5

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

-

2.3

-

nC

td(on)

Turn-on Delay Time

2

VDS=15V

-

6

-

ns

tr

Rise Time

ID=10A

-

30

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=10V

-

10

-

ns

tf

Fall Time

RD=1.5Ω

-3

-

ns

Ciss

Input Capacitance

VGS=0V

-

270

430

pF

Coss

Output Capacitance

VDS=25V

-

70

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

50

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

2

IS=5A, VGS=0V

-

1.3

V

t

rr

Reverse Recovery Time

2

IS=10A, VGS=0V,

-

16

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

9

-

nC

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

AP20T03GH/J

±100

± 20V

±100

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