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BAR63V-04W-GS18 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAR63V-04W-GS18 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85698 Rev. 1.2, 26-Apr-04 VISHAY BAR63V-04W Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Forward resistance f = 100 MHz, IF = 1 mA rf 2.0 Ω f = 100 MHz, IF = 5 mA rf 1.1 2.0 Ω f = 100 MHz, IF = 10 mA rf 0.9 Ω Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA trr 115 ns Parameter Test condition Symbol Min Typ. Max Unit Fig. 1 Forward Resistance vs. Forward Current Fig. 2 Diode Capacitance vs. Reverse Voltage 1 10 100 1000 0.1 1 10 100 R – Load Resistance (k Ω) 18341 t t Pulse Width = 100 ms I = 10 mA Duty Cycle = 50 % L F rise fall 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 4 8 12 16 20 24 28 18333 VR - Reverse V oltage (V) f=1MHz Fig. 3 Forward Current vs. Forward Voltage Fig. 4 Reverse Voltage vs. Reverse Current 0.01 0.10 1.00 10.00 100.00 0.5 0.6 0.7 0.8 0.9 1.0 VF - Forward Voltage(V) 18325 0 20 40 60 80 100 120 0.01 0.1 1.0 10 100 1000 IR - Reverse Current ( µA) 18329 |
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