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AOD419 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD419 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 16.7 25 40 50 RθJL 2.5 3 Maximum Junction-to-Case C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W W TA=70°C 1.6 Junction and Storage Temperature Range -55 to 175 Power Dissipation A TA=25°C PDSM 2.5 A Repetitive avalanche energy L=0.3mH C mJ Power Dissipation B TC=25°C PD W TC=100°C Avalanche Current C Continuous Drain Current B,G Maximum Units Parameter TA=25°C G TA=100°C Absolute Maximum Ratings TA=25°C unless otherwise noted ID Gate-Source Voltage Drain-Source Voltage -40 Pulsed Drain Current -20 -18 -60 °C V V ±20 25 A -20 60 50 AOD419 P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -40V ID = -20A (VGS = -10V) RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) General Description The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD419 is Pb-free (meets ROHS & Sony 259 specifications). AOD419L is a Green Product ordering option. AOD419 and AOD419L are electrically identical. G D S TO-252 D-PAK Top View Drain Connected to Tab G D S Alpha & Omega Semiconductor, Ltd. |
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Similar Description - AOD419 |
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