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IRHQ3214 Datasheet(PDF) 1 Page - International Rectifier |
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IRHQ3214 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page Absolute Maximum Ratings ( Per Die) Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 1.6 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 1.0 IDM Pulsed Drain Current ➀ 6.4 PD @ TC = 25°C Max. Power Dissipation 12 W Linear Derating Factor 0.1 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 62 mJ IAR Avalanche Current ➀ 1.6 A EAR Repetitive Avalanche Energy ➀ 1.2 mJ dv/dt Peak Diode Recovery dv/dt ➂ 3.5 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 0.89 (Typical) g Pre-Irradiation International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite ap- plications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The com- bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 04/22/03 www.irf.com 1 Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount For footnotes refer to the last page LCC-28 n Light Weight Product Summary Part Number Radiation Level RDS(on) ID IRHQ7214 100K Rads (Si) 2.25 Ω 1.6A IRHQ3214 300K Rads (Si) 2.25 Ω 1.6A IRHQ4214 600K Rads (Si) 2.25 Ω 1.6A IRHQ8214 1000K Rads (Si) 2.25 Ω 1.6A IRHQ7214 250V, QUAD N-CHANNEL RAD-Hard ™ HEXFET ® MOSFET TECHNOLOGY PD - 93828A |
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