Absolute Maximum Ratings ( Per Die)

Parameter

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

1.6

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

1.0

IDM

Pulsed Drain Current ➀

6.4

PD @ TC = 25°C

Max. Power Dissipation

12

W

Linear Derating Factor

0.1

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

62

mJ

IAR

Avalanche Current ➀

1.6

A

EAR

Repetitive Avalanche Energy ➀

1.2

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

3.5

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Pckg. Mounting Surface Temp.

300 (for 5s)

Weight

0.89 (Typical)

g

Pre-Irradiation

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite ap-

plications. These devices have been characterized for

both Total Dose and Single Event Effects (SEE). The com-

power losses in switching applications such as DC to DC

converters and motor control. These devices retain all of

the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

04/22/03

www.irf.com

1

Features:

For footnotes refer to the last page

LCC-28

Product Summary

Part Number Radiation Level

IRHQ7214

100K Rads (Si)

2.25

Ω

1.6A

IRHQ3214

300K Rads (Si)

2.25

Ω

1.6A

IRHQ4214

600K Rads (Si)

2.25

Ω

1.6A

IRHQ8214

1000K Rads (Si)

2.25

Ω

1.6A

IRHQ7214

250V, QUAD N-CHANNEL

RAD-Hard

®

MOSFET TECHNOLOGY

PD - 93828A