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IS41LV32256-30PQ Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc |
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IS41LV32256-30PQ Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc |
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7 / 19 page  Integrated Silicon Solution, Inc. 7 Rev. A 09/29/00 IS41LV32256 ISSI® AC CHARACTERISTICS(1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) -28 -30 -35 Symbol Parameter Min. Max. Min. Max. Min. Max. Units tCLZ CAS to Output in Low-Z(15, 29) 3 — 3 — 3 — ns tCRP CAS to RAS Precharge Time(21) 5 — 5 — 5 — ns tOD Output Disable Time(19, 28, 29) 315 3 15 315 ns tOE Output Enable Time(15, 16) — 9 — 9 — 10 ns tOEHC OE HIGH Hold Time from CAS HIGH 10 — 10 — 10 — ns tOEP OE HIGH Pulse Width 10 — 10 — 10 — ns tOES OE LOW to CAS HIGH Setup Time 5 — 5 — 5 — ns tRCS Read Command Setup Time(17, 20) 0 — 0 — 0 — ns tRRH Read Command Hold Time 0 — 0 — 0 — ns (referenced to RAS)(12) tRCH Read Command Hold Time 0 — 0 — 0 — ns (referenced to CAS)(12, 17, 21) tWCH Write Command Hold Time(17, 27) 5 — 5 — 5 — ns tWCR Write Command Hold Time 21 — 22 — 24 — ns (referenced to RAS)(17) tWP Write Command Pulse Width(17) 5 — 5 — 6 — ns tWPZ WE Pulse Widths to Disable Outputs 10 — 10 — 10 — ns tRWL Write Command to RAS Lead Time(17) 7 — 7 — 8 — ns tCWL Write Command to CAS Lead Time(17, 21) 5 — 5 — 8 — ns tWCS Write Command Setup Time(14, 17, 20) 0 — 0 — 0 — ns tDHR Data-in Hold Time (referenced to RAS)21 — 22 — 24 — ns tACH Column-Address Setup Time to CAS 15 — 15 — 15 — ns Precharge during WRITE Cycle tOEH OE Hold Time from WE during 5 — 5 — 6 — ns READ-MODIFY-WRITE cycle(18) tDS Data-In Setup Time(15, 22) 0 — 0 — 0 — ns tDH Data-In Hold Time(15, 22) 5 — 5 — 6 — ns tRWC READ-MODIFY-WRITE Cycle Time 73 — 73 — 80 — ns tRWD RAS to WE Delay Time during 40 — 40 — 45 — ns READ-MODIFY-WRITE Cycle(14) tCWD CAS to WE Delay Time(14, 20) 18 — 18 — 20 — ns tAWD Column-Address to WE Delay Time(14) 24 — 25 — 30 — ns tPC EDO Page Mode READ or WRITE 12 — 12 — 15 — ns Cycle Time(24) tRASP RAS Pulse Width in EDO Page Mode 28 100K 30 100K 35 100K ns tCPA Access Time from CAS Precharge(15) — 17 — 18 — 21 ns tPRWC EDO Page Mode READ-WRITE 34 — 35 — 40 — ns Cycle Time(24) tCHO Data Output Hold after CAS LOW 3 — 3 — 3 — ns tOFF Output Buffer Turn-Off Delay from 3 7 3 7 3 15 ns CAS or RAS(13,15,19, 29) tWHZ Output Disable Delay from WE 310 3 10 315 ns (Continued) |
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