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ZNBG4000Q16 Datasheet(PDF) 7 Page - Zetex Semiconductors |
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ZNBG4000Q16 Datasheet(HTML) 7 Page - Zetex Semiconductors |
7 / 10 page ZNBG4000 ZNBG4000 ZNBG4001 ZNBG6000 ZNBG6001 APPLICATIONS INFORMATION (Continued) The ZNBG devices have been designed to protect the external FETs from adverse operating conditions. With a JFET connected to any bias circuit, the gate output voltage of the bias circuit can not exceed the range -3.5V to 0.7V, under any conditions including powerup and powerdown transients. Should the negative bias generator be shorted or overloaded so that the drain current of the external FETs can no longer be controlled, the drain supply to FETs is shut down to avoid damage to the FETs by excessive drain current. The following diagrams show the ZNBG4000/1 and ZNBG6000/1 in typical LNB applications. Within each FET gain stage the numbering system indicates how the bias stages relate to the application circuits. This is important when RCAL values are used to set differing drain currents. Dual standard or enhanced LNB block diagram 4-143 |
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Similar Description - ZNBG4000Q16 |
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