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NCS2540DTR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCS2540DTR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 13 page NCS2540 http://onsemi.com 3 ATTRIBUTES Characteristics Value ESD Human Body Model Machine Model Charged Device Model 2.0 kV 200 V 1.0 kV Moisture Sensitivity (Note 1) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in 1. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage VS 11 Vdc Input Voltage Range VI vVS Vdc Input Differential Voltage Range VID vVS Vdc Output Current IO 100 mA Maximum Junction Temperature (Note 2) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −60 to +150 °C Power Dissipation PD (See Graph) mW Thermal Resistance, Junction−to−Air RqJA 179 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. Figure 3. Power Dissipation vs. Temperature 800 400 0 −50 0 75 150 AMBIENT TEMPERATURE (C) 200 −25 25 50 100 125 1000 600 1400 1200 |
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