Low Capacitance, Triple/Quad SPDT

±15 V/+12 V i CMOS™ Switches

ADG1233/ADG1234

Rev. A

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringements of patents or other

rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

www.analog.com

Fax: 781.461.3113

©2006 Analog Devices, Inc. All rights reserved.

FEATURES

1.5 pF off capacitance

0.5 pC charge injection

33 V supply range

120 Ω on resistance

Fully specified at ±15 V/+12 V

3 V logic-compatible inputs

Rail-to-rail operation

Break-before-make switching action

16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP

Typical power consumption (<0.03 μW)

APPLICATIONS

Audio and video routing

Automatic test equipment

Data acquisition systems

Battery-powered systems

Sample-and-hold systems

Communication systems

GENERAL DESCRIPTION

The ADG1233 and ADG1234 are monolithic iCMOS analog

switches comprising three independently selectable single-pole,

double throw SPDT switches and four independently selectable

SPDT switches, respectively.

All channels exhibit break-before-make switching action

preventing momentary shorting when switching channels.

An EN input on the ADG1233 and ADG1234 is used to

enable or disable the device. When disabled, all channels are

switched off.

FUNCTIONAL BLOCK DIAGRAMS

ADG1233

S1B

D1

S1A

S2A

IN2

IN1

IN3

D2

S2B

S3A

D3

S3B

SWITCHES SHOWN FOR A LOGIC 1 INPUT

LOGIC

EN

Figure 1.

SWITCHES SHOWN FOR A LOGIC 1 INPUT

ADG1234

S1B

D1

S1A

S2A

IN2

IN1

IN3

D2

S2B

S4B

D4

S4A

S3A

D3

S3B

LOGIC

EN

IN4

Figure 2.

The iCMOS (industrial-CMOS) modular manufacturing process

combines a high voltage complementary metal-oxide semi-

conductor (CMOS) and bipolar technologies. It enables the

development of a wide range of high performance analog ICs

capable of 33 V operation in a footprint that no other generation of

high voltage parts has been able to achieve. Unlike analog ICs

using conventional CMOS processes, iCMOS components can

tolerate high supply voltages while providing increased perfor-

mance, dramatically lowered power consumption, and reduced

package size.

The ultralow capacitance and charge injection of these multiplexers

make them ideal solutions for data acquisition and sample-and-

hold applications, where low glitch and fast settling are required.

Fast switching speed coupled with high signal bandwidth make the

parts suitable for video signal switching. iCMOS construction

ensures ultralow power dissipation, making the parts ideally

suited for portable and battery-powered instruments.

PRODUCT HIGHLIGHTS

1. 1.5 pF off capacitance (±15 V supply).

2. 0.5 pC charge injection.

4. 16-lead TSSOP, 20-lead TSSOP, and 4 mm × 4 mm LFCSP.