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BRS212-140 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BRS212-140 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Breakover diodes BRS212 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance junction to - - 25 K/W solder point R th j-a Thermal resistance junction to pcb mounted; minimum footprint - 100 - K/W ambient Z th j-a Thermal impedance junction to t p = 1 ms - 2.6 - K/W ambient ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise stated TYPE PARAMETER Marking Avalanche Breakover Off-state current Critical rate of voltage voltage rise of off-state voltage Conditions I BR = 10 mA I D ≤ IS T j = 70˚C; T j = 70˚C t p = 100 µs RH ≤ 65% Symbol V BR V BO I D @ VD dV D/dt @ VDM Limits min typ typ max max max Units VVVV µAV V/ µsV BRS212-140 212-140 123 140 140 157 10 105 2000 105 BRS212-160 212-160 140 160 160 180 10 120 2000 120 BRS212-180 212-180 158 180 180 202 10 135 2000 135 BRS212-200 212-200 176 200 200 224 10 150 2000 150 BRS212-220 212-220 193 220 220 247 10 165 2000 165 BRS212-240 212-240 211 240 240 269 10 180 2000 180 BRS212-260 212-260 228 260 260 292 10 195 2000 195 BRS212-280 212-280 246 280 280 314 10 210 2000 210 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V T On-state voltage I TM = 2 A; tp = 200 µs - - 2.5 V I H Holding current 1 T j = 25˚C 150 - - mA T j = 70˚C 100 - - mA I S Switching current 2 t p = 100 µs 10 200 1000 mA S (BR) Temperature coefficient of - +0.1 - %/K avalanche voltage C j Junction capacitance V D = 0 V, f = 1 kHz to 1 MHz - - 100 pF 1 The minimum current at which the diode will remain in the on-state 2 The avalanche current required to switch the diode to the on-state. January 1997 2 Rev 1.000 |
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Similar Description - BRS212-140 |
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