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BRS212-220 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BRS212-220 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Breakover diodes BRS212 series Fig.1. Definition of breakover diode characteristics. Fig.2. Test waveform for high voltage impulse (I PP) according to CCITT vol IX-Rec K17. Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents; f = 50 Hz; device triggered at the start of each pulse; T j = 70˚C prior to surge. Fig.4. Normalised avalanche breakdown voltage V (BR) and V (BO) as a function of temperature. Fig.5. On-state current as a function of on-state voltage; t p = 200 µs to avoid excessive dissipation. Fig.6. Maximum off-state current as a function of temperature. VT IT IH V(BO) IS ID VD current voltage Symbol V(BR) I(BR) Symmetric BOD -40 -20 0 20 40 60 80 100 Tj / C V(BR)(Tj) 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0.90 V(BR)(25 C) 100% 90% 50% 30% I 5us 310us time current 0 PP 123 4 0 5 10 15 20 Tj = 25 C Tj = 150 C IT / A VT / V typ max 1 10 100 1000 10000 0 5 10 15 20 BR211 Number of impulses ITSM / A I ITSM time -40 -20 0 20 40 60 80 100 Tj / C ID / uA 0.1 1 10 100 max January 1997 3 Rev 1.000 |
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